Synthesis of CuInS2 nanoparticles via simple microwave approach and investigation of their behavior in solar cell
Identifieur interne : 000400 ( Main/Repository ); précédent : 000399; suivant : 000401Synthesis of CuInS2 nanoparticles via simple microwave approach and investigation of their behavior in solar cell
Auteurs : RBID : Pascal:13-0188173Descripteurs français
- Pascal (Inist)
- Hyperfréquence, Cellule solaire, Station base, Traitement thermique, Microstructure, Morphologie, Diffraction RX, Microscopie électronique balayage, Microscopie électronique transmission, Spectre visible, Spectrométrie visible, Spectre UV visible, Spectrométrie UV visible, Température ambiante, Photoluminescence, Facteur remplissage, Tension circuit ouvert, Courant court circuit, Caractéristique courant tension, Composé ternaire, Sulfure de cuivre, Sulfure d'indium, Nanoparticule, Nanocristal, Cuivre, Soufre, 8460J, 6865, 0779, 7840R, CuInS2, 7867.
- Wicri :
English descriptors
- KwdEn :
- Ambient temperature, Base station, Copper, Copper sulfide, Fill factor, Heat treatments, IV characteristic, Indium sulfide, Microstructure, Microwave radiation, Morphology, Nanocrystal, Nanoparticles, Open circuit voltage, Photoluminescence, Scanning electron microscopy, Short circuit currents, Solar cells, Sulfur, Ternary compounds, Transmission electron microscopy, Ultraviolet visible spectrometry, Ultraviolet visible spectrum, Visible spectra, Visible spectroscopy, XRD.
Abstract
Copper indium sulfide, CuInS2, nanocrystals were synthesized by a new precursor complex, [bis(2-hyroxyacetophenato)copper(II)], [Cu(HAP)2], via a microwave method. The effects of sulfur sources, solvents, heating time and microwave power on morphology of product were investigated. The as-synthesized CuInS2 nanoparticles were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), ultraviolet-visible (UV-vis) spectroscopy, and room temperature photoluminescence (PL) spectroscopy. The nanoparticles of CuInS2 were used to prepare CuInS2 film by doctor's blade technique. The fill factor (FF), open circuit voltage (Voc), and short circuit current (Jsc) were obtained by I-V characterization.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Synthesis of CuInS<sub>2 </sub>nanoparticles via simple microwave approach and investigation of their behavior in solar cell</title><author><name sortKey="Sabet, Mohammad" uniqKey="Sabet M">Mohammad Sabet</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, Faculty of Science, Sanandaj Branch, Islamic Azad University</s1><s2>Sanandaj</s2><s3>IRN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Iran</country><wicri:noRegion>Sanandaj</wicri:noRegion></affiliation></author><author><name sortKey="Salavati Niasari, Masoud" uniqKey="Salavati Niasari M">Masoud Salavati-Niasari</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Nanoscience and Nanotechnology, University of Kashan, P.O. Box 87317-51167</s1><s2>Kashan</s2><s3>IRN</s3><sZ>2 aut.</sZ></inist:fA14><country>Iran</country><wicri:noRegion>Kashan</wicri:noRegion></affiliation></author><author><name sortKey="Ghanbari, Davood" uniqKey="Ghanbari D">Davood Ghanbari</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, Faculty of Science, Sanandaj Branch, Islamic Azad University</s1><s2>Sanandaj</s2><s3>IRN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Iran</country><wicri:noRegion>Sanandaj</wicri:noRegion></affiliation></author><author><name sortKey="Amiri, Omid" uniqKey="Amiri O">Omid Amiri</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, Faculty of Science, Sanandaj Branch, Islamic Azad University</s1><s2>Sanandaj</s2><s3>IRN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Iran</country><wicri:noRegion>Sanandaj</wicri:noRegion></affiliation></author><author><name sortKey="Yousefi, Mohammad" uniqKey="Yousefi M">Mohammad Yousefi</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Islamic Azad University, Shahre Rey Branch, P.O. Box 18155-144</s1><s2>Tehran</s2><s3>IRN</s3><sZ>5 aut.</sZ></inist:fA14><country>Iran</country><wicri:noRegion>Tehran</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0188173</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0188173 INIST</idno><idno type="RBID">Pascal:13-0188173</idno><idno type="wicri:Area/Main/Corpus">000D58</idno><idno type="wicri:Area/Main/Repository">000400</idno></publicationStmt><seriesStmt><idno type="ISSN">1369-8001</idno><title level="j" type="abbreviated">Mater. sci. semicond. process.</title><title level="j" type="main">Materials science in semiconductor processing</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term><term>Base station</term><term>Copper</term><term>Copper sulfide</term><term>Fill factor</term><term>Heat treatments</term><term>IV characteristic</term><term>Indium sulfide</term><term>Microstructure</term><term>Microwave radiation</term><term>Morphology</term><term>Nanocrystal</term><term>Nanoparticles</term><term>Open circuit voltage</term><term>Photoluminescence</term><term>Scanning electron microscopy</term><term>Short circuit currents</term><term>Solar cells</term><term>Sulfur</term><term>Ternary compounds</term><term>Transmission electron microscopy</term><term>Ultraviolet visible spectrometry</term><term>Ultraviolet visible spectrum</term><term>Visible spectra</term><term>Visible spectroscopy</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Hyperfréquence</term><term>Cellule solaire</term><term>Station base</term><term>Traitement thermique</term><term>Microstructure</term><term>Morphologie</term><term>Diffraction RX</term><term>Microscopie électronique balayage</term><term>Microscopie électronique transmission</term><term>Spectre visible</term><term>Spectrométrie visible</term><term>Spectre UV visible</term><term>Spectrométrie UV visible</term><term>Température ambiante</term><term>Photoluminescence</term><term>Facteur remplissage</term><term>Tension circuit ouvert</term><term>Courant court circuit</term><term>Caractéristique courant tension</term><term>Composé ternaire</term><term>Sulfure de cuivre</term><term>Sulfure d'indium</term><term>Nanoparticule</term><term>Nanocristal</term><term>Cuivre</term><term>Soufre</term><term>8460J</term><term>6865</term><term>0779</term><term>7840R</term><term>CuInS2</term><term>7867</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term><term>Soufre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Copper indium sulfide, CuInS<sub>2</sub>, nanocrystals were synthesized by a new precursor complex, [bis(2-hyroxyacetophenato)copper(II)], [Cu(HAP)<sub>2</sub>], via a microwave method. The effects of sulfur sources, solvents, heating time and microwave power on morphology of product were investigated. The as-synthesized CuInS<sub>2</sub> nanoparticles were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), ultraviolet-visible (UV-vis) spectroscopy, and room temperature photoluminescence (PL) spectroscopy. The nanoparticles of CuInS<sub>2</sub> were used to prepare CuInS<sub>2</sub> film by doctor's blade technique. The fill factor (FF), open circuit voltage (V<sub>oc</sub>), and short circuit current (J<sub>sc</sub>) were obtained by I-V characterization.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1369-8001</s0></fA01><fA03 i2="1"><s0>Mater. sci. semicond. process.</s0></fA03><fA05><s2>16</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Synthesis of CuInS<sub>2 </sub>nanoparticles via simple microwave approach and investigation of their behavior in solar cell</s1></fA08><fA11 i1="01" i2="1"><s1>SABET (Mohammad)</s1></fA11><fA11 i1="02" i2="1"><s1>SALAVATI-NIASARI (Masoud)</s1></fA11><fA11 i1="03" i2="1"><s1>GHANBARI (Davood)</s1></fA11><fA11 i1="04" i2="1"><s1>AMIRI (Omid)</s1></fA11><fA11 i1="05" i2="1"><s1>YOUSEFI (Mohammad)</s1></fA11><fA14 i1="01"><s1>Department of Chemistry, Faculty of Science, Sanandaj Branch, Islamic Azad University</s1><s2>Sanandaj</s2><s3>IRN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Nanoscience and Nanotechnology, University of Kashan, P.O. Box 87317-51167</s1><s2>Kashan</s2><s3>IRN</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Islamic Azad University, Shahre Rey Branch, P.O. Box 18155-144</s1><s2>Tehran</s2><s3>IRN</s3><sZ>5 aut.</sZ></fA14><fA20><s1>696-704</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888A</s2><s5>354000173387330190</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>48 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0188173</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Materials science in semiconductor processing</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Copper indium sulfide, CuInS<sub>2</sub>, nanocrystals were synthesized by a new precursor complex, [bis(2-hyroxyacetophenato)copper(II)], [Cu(HAP)<sub>2</sub>], via a microwave method. The effects of sulfur sources, solvents, heating time and microwave power on morphology of product were investigated. The as-synthesized CuInS<sub>2</sub> nanoparticles were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), ultraviolet-visible (UV-vis) spectroscopy, and room temperature photoluminescence (PL) spectroscopy. The nanoparticles of CuInS<sub>2</sub> were used to prepare CuInS<sub>2</sub> film by doctor's blade technique. The fill factor (FF), open circuit voltage (V<sub>oc</sub>), and short circuit current (J<sub>sc</sub>) were obtained by I-V characterization.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07W</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="03" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H55</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Hyperfréquence</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Microwave radiation</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Solar cells</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Station base</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Base station</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Estación base</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Traitement thermique</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Heat 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visible</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Visible spectroscopy</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Spectre UV visible</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Ultraviolet visible spectrum</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Espectro UV visible</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Spectrométrie UV visible</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Ultraviolet visible spectrometry</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Espectrometría UV visible</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Température ambiante</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Ambient temperature</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Facteur remplissage</s0><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Fill factor</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Tension circuit ouvert</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Open circuit voltage</s0><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Courant court circuit</s0><s5>18</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Short circuit currents</s0><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Caractéristique courant tension</s0><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>IV characteristic</s0><s5>19</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>22</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>22</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Sulfure de cuivre</s0><s5>23</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Copper sulfide</s0><s5>23</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Cobre sulfuro</s0><s5>23</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Sulfure d'indium</s0><s5>24</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Indium sulfide</s0><s5>24</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Indio sulfuro</s0><s5>24</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Nanoparticule</s0><s5>25</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Nanoparticles</s0><s5>25</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Nanocristal</s0><s5>26</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Nanocrystal</s0><s5>26</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Nanocristal</s0><s5>26</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>27</s5></fC03><fC03 i1="25" i2="3" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>27</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Soufre</s0><s2>NC</s2><s5>28</s5></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Sulfur</s0><s2>NC</s2><s5>28</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>6865</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>0779</s0><s4>INC</s4><s5>58</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>7840R</s0><s4>INC</s4><s5>59</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>CuInS2</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="32" i2="3" l="FRE"><s0>7867</s0><s4>INC</s4><s5>83</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>20</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>20</s5></fC07><fC07 i1="02" i2="3" l="FRE"><s0>Dispositif optoélectronique</s0><s5>21</s5></fC07><fC07 i1="02" i2="3" l="ENG"><s0>Optoelectronic devices</s0><s5>21</s5></fC07><fN21><s1>168</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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